{"title":"GaAs(100)衬底CdTe薄膜中浅层受体的光致发光分析","authors":"C. Onodera, Masaaki Yoshida","doi":"10.30970/jps.25.3701","DOIUrl":null,"url":null,"abstract":"In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .","PeriodicalId":43482,"journal":{"name":"Journal of Physical Studies","volume":"46 1","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates\",\"authors\":\"C. Onodera, Masaaki Yoshida\",\"doi\":\"10.30970/jps.25.3701\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .\",\"PeriodicalId\":43482,\"journal\":{\"name\":\"Journal of Physical Studies\",\"volume\":\"46 1\",\"pages\":\"\"},\"PeriodicalIF\":0.7000,\"publicationDate\":\"2021-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physical Studies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30970/jps.25.3701\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physical Studies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30970/jps.25.3701","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates
In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride (cid:28)lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride (cid:28)lm is greater than 1.5 × 10 18 cm − 3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-to-bound reaction constant for the undoped cadmium telluride (cid:28)lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s − 1 .
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