The Effects of Localized Trap Energy on the Photoluminescence Intensity of Gallium Nitrate (GaN) Compound Semiconductor for Different Radiative Trap Level

In this paper, we model effects of localized trap energy on the photoluminescence at different radiative trap level. Wherever possible, the concepts are augmented with data, with particular emphasis in the case of Gallium nitrate. By using illumination and lifetime, the intensity of light in each band is determined by assuming one incident photon ejects one electron at a time. From this at different temperature, illumination, doping concentration and impurity densities of states the intensities of light vary for all radiative recombination mechanisms. By varying illumination and impurity densities of states at room temperature, the dominated radiative recombination mechanisms are studied from the three radiative recombination mechanisms. At high values of illumination, the intensity of light in band-to-band radiative recombination mechanism dominates for all values of localized trap energies. For high values of impurity trap density, only the intensity of light in conduction band to trap level radiative recombination mechanisms dominates for all localized trap energies.