CuInS2自由表面的性能及导电聚合物层对其性能的影响

A. Verbitsky, Y. Vertsimakha, P. Lutsyk, S. Studzinsky, S. Bereznev, J. Kois, A. Öpik, Enn Mellikov
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引用次数: 2

摘要

研究了导电聚合物薄层对CISC uT法制备的CuInS2 (CIS)层表面光电压的影响。在CIS的自由表面沉积聚(3,4-乙烯二氧噻吩)薄膜,使得势能势垒的高度略有降低,载流子通过CIS/聚合物界面的输运效率有所提高。对咔唑类聚合物在CIS自由表面沉积所引起的光伏性能变化进行了分析。我们的研究结果证实了在基于无机光吸收剂CIS的光伏电池的完整电池结构中使用导电聚合物薄膜作为有机缓冲层的可能性。
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Properties of CuInS2 free surface and the effect of conductive polymer layers on these properties
The influence of thin conductive polymer layers on the surf ace photovoltage of CuInS2 (CIS) layers prepared using the so-called CISC uT method was studied. The deposition of poly(3,4- ethylenedioxythiophene) films on the free surf ace of CIS resulted in a small decrease in the height of the potential energetic barrier and in an increase in the efficiency of charge carriers transport through the CIS/polymer interface. The change of photovoltaic properties resulting from the polymer deposition on the free surface of CIS was also analysed for the carbazole polymers. Our results confirm the possibility of using the conductive polymer films as organic buffer layers in complete cell structures for photovoltaic cells based on the inorganic photoabsorber CIS.
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