稀释磁性半导体中次近邻跳变对铁磁性的影响

Sourav Chakraborty, S. Das, K. Pradhan
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摘要

GaMnN作为一种宽带隙系统,在发现了所有稀释磁性半导体中最高的铁磁转变温度$T_C$ $ $\sim$ 940k后,引起了人们的极大兴趣。后来成为一个争论由于铁磁态的观察与非常低的T_C \ sim 8 K美元美元或者有时没有铁磁态。我们通过在简单立方晶格上使用自旋费米子蒙特卡罗方法计算$t-t'$ Kondo晶格模型中的铁磁窗口$T_C$ Vs $p$来解决这些问题。我们利用次近邻跳跃$t'$来调整自由载流子的离域程度,并表明载流子的局部化(离域)显著地扩大(缩小)了铁磁窗口,减小(增强)了最优的$T_C$。我们将我们的结果与实验结果联系起来,并试图理解GaMnN中铁磁性的模糊性。
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Impact of next-nearest-neighbor hopping on ferromagnetism in diluted magnetic semiconductors
Being a wide band gap system GaMnN attracted considerable interest after the discovery of highest reported ferromagnetic transition temperature $T_C$ $\sim$ 940 K among all diluted magnetic semiconductors. Later it become a debate due to the observation of either a ferromagnetic state with very low $T_C$ $\sim$ 8 K or sometimes no ferromagnetic state at all. We address these issues by calculating the ferromagnetic window, $T_C$ Vs $p$, within a $t-t'$ Kondo lattice model using a spin-fermion Monte-Carlo method on a simple cubic lattice. We exploit the next-nearest-neighbor hopping $t'$ to tune the degree of delocalization of the free carriers and show that carrier localization (delocalization) significantly widen (shrunken) the ferromagnetic window with a reduction (enhancement) of the optimum $T_C$. We connect our results with the experimental findings and try to understand the ambiguities in ferromagnetism in GaMnN.
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