气溶胶沉积法在FR‐4上嵌入陶瓷被动式

Y. Imanaka, J. Akedo
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引用次数: 0

摘要

在射频无线通信产品中,将电容器、滤波器、电感等各种无源元件嵌入一块电路板,可以有效地实现小型化、降低成本和提高性能。使用不同的电路板技术对嵌入式无源进行了大量的研发。然而,到目前为止,还没有开发出能够满足所有要求的电路板。我们提出一种树脂组合电路板,嵌入具有无源功能的陶瓷膜,以实现下一代低成本射频模块。这些电路板可以同时获得微型化的精细模式,提高性能,如低传输损耗和高电容密度,并降低成本。实现这种电路所需的关键是陶瓷沉积。我们独特的气溶胶沉积(AD)方法可以在树脂基板中嵌入被动陶瓷元件。薄膜是通过加速陶瓷纳米粒子气溶胶轰击形成的。许多种类的陶瓷可以在室温下沉积在衬底上。本文提出了一种在树脂FR-4衬底上制备嵌入式电容器的新方法和实验结果。讨论了不同沉积条件下AD介质膜的微观结构与介电性能的关系。我们证实了在室温下可以在树脂衬底上形成介电常数为400的致密batio3介电膜。在FR-4衬底上嵌入电容器的电容密度为300 nF/ cm2。
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Embedded Ceramic Passive on FR‐4 Using Aerosol Deposition
Embedding various passive components, such as capacitors, filters, and inductors, in one circuit board, effectively achieves miniaturization, cost reduction, and higher performance in RF wireless communication products. Much R&D into embedded passives has been conducted using different circuit board technologies. However, no circuit boards developed to date satisfy all [of the requirements that is required of them. We propose a resin built-up circuit board that embeds ceramic film with passive functions to achieve low-cost RF modules in the next generation. These circuit boards make it possible to simultaneously obtain a fine pattern for miniaturization, improved performance, such as low transmission loss and high capacitance density, and cost reduction. The key required to achieve such a circuit is ceramic deposition. Our unique aerosol deposition (AD) method can provide passive ceramic elements embedded in the resin substrate. The film is formed by accelerated ceramic nano-particle aerosol bombardment. Many kinds of ceramics can be deposited on a substrate at room temperature. We present a novel AD approach to fabricating embedded capacitors on resin FR-4 substrates and the experimental results. We also discuss the correlation between the microstructure and dielectric properties of AD dielectric films deposited under various conditions. We confirmed that dense BaTiO 3 dielectric films with a dielectric constant of 400 could be formed on resin substrates at RT. Embedded capacitors on an FR-4 substrate, fabricated as a prototype with this AD film, had a capacitance density of 300 nF/cm 2 .
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