{"title":"HT-EBL和ET-HBL高效p-n - Si太阳能电池的数值模拟","authors":"A. Amin, M. F. Hossain","doi":"10.1109/ICECTE.2016.7879563","DOIUrl":null,"url":null,"abstract":"The Hole Transport-Electron Blocking Layer (HT-EBL) and Electron Transport-Hole Blocking Layer (ET-HBL) are added on the front surface and back surface of the silicon wafer respectively for designing the high efficiency p-n homojunction Si solar cell in this simulation. The cell was simulated using A One-Dimensional Device Simulation Program for Analysis of Microelectronic and Photonic Structures (AMPS-1D) by varying the doping density and layer thickness of the p type and n type Si layer. It has been investigated that there have a great effect of doping density and layer thickness on the efficiency of solar cell and optimum efficiency has been achieved. The maximum efficiency of 28.198% has been investigated at the doping density of 1.0e+021 cm−3 and layer thickness of 8000 nm.","PeriodicalId":6578,"journal":{"name":"2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulation for the high efficiency p-n Si solar cell with HT-EBL and ET-HBL\",\"authors\":\"A. Amin, M. F. Hossain\",\"doi\":\"10.1109/ICECTE.2016.7879563\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Hole Transport-Electron Blocking Layer (HT-EBL) and Electron Transport-Hole Blocking Layer (ET-HBL) are added on the front surface and back surface of the silicon wafer respectively for designing the high efficiency p-n homojunction Si solar cell in this simulation. The cell was simulated using A One-Dimensional Device Simulation Program for Analysis of Microelectronic and Photonic Structures (AMPS-1D) by varying the doping density and layer thickness of the p type and n type Si layer. It has been investigated that there have a great effect of doping density and layer thickness on the efficiency of solar cell and optimum efficiency has been achieved. The maximum efficiency of 28.198% has been investigated at the doping density of 1.0e+021 cm−3 and layer thickness of 8000 nm.\",\"PeriodicalId\":6578,\"journal\":{\"name\":\"2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)\",\"volume\":\"11 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECTE.2016.7879563\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECTE.2016.7879563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulation for the high efficiency p-n Si solar cell with HT-EBL and ET-HBL
The Hole Transport-Electron Blocking Layer (HT-EBL) and Electron Transport-Hole Blocking Layer (ET-HBL) are added on the front surface and back surface of the silicon wafer respectively for designing the high efficiency p-n homojunction Si solar cell in this simulation. The cell was simulated using A One-Dimensional Device Simulation Program for Analysis of Microelectronic and Photonic Structures (AMPS-1D) by varying the doping density and layer thickness of the p type and n type Si layer. It has been investigated that there have a great effect of doping density and layer thickness on the efficiency of solar cell and optimum efficiency has been achieved. The maximum efficiency of 28.198% has been investigated at the doping density of 1.0e+021 cm−3 and layer thickness of 8000 nm.
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