晶体材料位错建模的领域本体

IF 0.4 Q4 COMPUTER SCIENCE, INFORMATION SYSTEMS Applied Computing Review Pub Date : 2023-03-27 DOI:10.1145/3555776.3578739
Ahmad Zainul Ihsan, S. Fathalla, S. Sandfeld
{"title":"晶体材料位错建模的领域本体","authors":"Ahmad Zainul Ihsan, S. Fathalla, S. Sandfeld","doi":"10.1145/3555776.3578739","DOIUrl":null,"url":null,"abstract":"Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.","PeriodicalId":42971,"journal":{"name":"Applied Computing Review","volume":null,"pages":null},"PeriodicalIF":0.4000,"publicationDate":"2023-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials\",\"authors\":\"Ahmad Zainul Ihsan, S. Fathalla, S. Sandfeld\",\"doi\":\"10.1145/3555776.3578739\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.\",\"PeriodicalId\":42971,\"journal\":{\"name\":\"Applied Computing Review\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2023-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Computing Review\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/3555776.3578739\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Computing Review","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3555776.3578739","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
引用次数: 2

摘要

晶体材料,如金属和半导体,几乎总是包含一种特殊的缺陷类型,称为位错。这种缺陷决定性地决定了许多重要的材料性能,例如强度、断裂韧性或延展性。在过去的几年中,通过实验表征技术和模拟,已经投入了大量的努力来理解不同长度尺度上的位错行为。本文介绍了位错本体(DISO),它定义了晶体材料中线性缺陷的相关概念和关系。我们采用自上而下的方法开发了DISO,在这种方法中,我们开始定义位错域中最一般的概念,并随后对它们进行专业化。DISO遵循发布关联数据的W3C最佳实践,通过持久URL发布。提出了DISO的两个潜在用例来说明它在位错动力学领域的有用性。对本体的评价从两个方面进行,即评价本体在现实世界领域建模的成功程度和本体的丰富性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials
Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Applied Computing Review
Applied Computing Review COMPUTER SCIENCE, INFORMATION SYSTEMS-
自引率
40.00%
发文量
8
期刊最新文献
DIWS-LCR-Rot-hop++: A Domain-Independent Word Selector for Cross-Domain Aspect-Based Sentiment Classification Leveraging Semantic Technologies for Collaborative Inference of Threatening IoT Dependencies Relating Optimal Repairs in Ontology Engineering with Contraction Operations in Belief Change Block-RACS: Towards Reputation-Aware Client Selection and Monetization Mechanism for Federated Learning Elastic Data Binning: Time-Series Sketching for Time-Domain Astrophysics Analysis
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1