S. Dvoretsky, A. P. Kovchavtsev, I. I. Lee, V. G. Polovinkin, G. Sidorov, M. Yakushev
{"title":"一种新型扫描红外探测器的设计","authors":"S. Dvoretsky, A. P. Kovchavtsev, I. I. Lee, V. G. Polovinkin, G. Sidorov, M. Yakushev","doi":"10.24425/opelre.2020.132505","DOIUrl":null,"url":null,"abstract":"Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":"51 1","pages":""},"PeriodicalIF":1.3000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new design of scanning IR detectors\",\"authors\":\"S. Dvoretsky, A. P. Kovchavtsev, I. I. Lee, V. G. Polovinkin, G. Sidorov, M. Yakushev\",\"doi\":\"10.24425/opelre.2020.132505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.\",\"PeriodicalId\":54670,\"journal\":{\"name\":\"Opto-Electronics Review\",\"volume\":\"51 1\",\"pages\":\"\"},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2023-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Opto-Electronics Review\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.24425/opelre.2020.132505\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Opto-Electronics Review","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.24425/opelre.2020.132505","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.
期刊介绍：
Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged.
It has been established for the publication of high quality original papers from the following fields:
Optical Design and Applications,
Image Processing
Metamaterials,
Optoelectronic Materials,
Micro-Opto-Electro-Mechanical Systems,
Infrared Physics and Technology,
Modelling of Optoelectronic Devices, Semiconductor Lasers
Technology and Fabrication of Optoelectronic Devices,
Photonic Crystals,
Laser Physics, Technology and Applications,
Optical Sensors and Applications,
Photovoltaics,
Biomedical Optics and Photonics
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
