III-V合金及其可见光发射极应用潜力

Progress in Crystal Growth and Characterization Pub Date : 1989-01-01 DOI:10.1016/0146-3535(89)90015-4

J.P. André, E. Augarde, E. Dupont-Nivet, J.N. Patillon, P. Riglet, N. Mariel, D. Moroni, A. Valster

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摘要

采用常压有机金属气相外延法生长与GaAs衬底相匹配的GaInP-AlGaInP晶格。对GaInP/GaAs异质结构进行了研究，并通过Shubnikov-de Haas在4 K下测量了载流子浓度为7.5 1011 cm-2时迁移率高达75000 cm2 V-1s-1。获得了发射波长分别为670 nm和576nm的红色和黄色LED。在脉冲模式下，实现了660nm的氧化条纹激光发射，其阈值电流密度为5ka cm-2。此外，还实现了三个最大输出功率为108 mW的脊波导激光二极管阵列。

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III–V alloys and their potential for visible emitter applications

Atmospheric pressure organometallic vapor phase epitaxy is used for the growth of GaInP-AlGaInP lattice matched to GaAs substrate. The investigation of the GaInP/GaAs heterostructure has been carried out and mobility as high as 75 000 cm² V^-1s^-1 for a sheet carrier concentration of 7.5 10¹¹ cm^-2 has been measured by Shubnikov-de Haas at 4 K. Red and yellow LED's have been obtained with emission wavelength of 670 nm and 576 nm respectively. Oxide stripe laser emitting at 660 nm in pulsed mode have been performed and present a threshold current density of 5 kA cm^-2. Three ridge waveguide laser diode arrays with maximum output power of 108 mW have also been achieved.

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