Comparison Between CVD and ALE Produced TiO2 Cathodes in Zn/(PEO)4ZnCl2/TiO2,SnO2 or ITO Galvanic Cells

The way of preparation of thin films of TiO 2 is extremely important regarding its application in electronic and optoelectronic devices. We have assembled Zn/(PEO) 4 ZnCl 2 /TiO 2 ,SnO 2 or ITO rechargeable galvanic cells using CVD (chemical vapour deposition) or ALE (atomic layer epitaxy) produced TiO 2 cathodes. The charge-discharge cycles were measured with a constant current in the range of 10 -6 to 10 -5 A for different cells. It was shown that CVD prepared TiO 2 cathode is increasing capacity of the cell by allowing higher constant currents to be applied to the cell. The complex impedance measurements of the electrolyte (PEO) 4 ZnCl 2 have been performed in the range of 1 Hz to 1 MHz and in the temperature range from 290 to 400 K by applying Zn or Sn electrodes.