Dependency of base transit time on process parameters: An analytical simulation of GaAsBi based HBT

This paper presents a scheme of threshold-voltage-based 2-D theoretical model of GaAsBi based HBT in accordance with its dependency of transit time on various process parameters. Using MATLAB simulation generalized base transit time equation is implemented by varying a set of parameters for the prediction of its application in semiconductor filed. A suitable doping concentration of Bismuth is chosen for the proposed model to forecast an ideal and optimized HBT model with the defined substrate materials.