AlGaAs/GaAs异质结构中电子迁移率对远端给体杂质离界面距离的功能依赖

J. Szymański, D. Neilson, F. Green, P.G. Kemeny, B.J. Linard
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引用次数: 0

摘要

我们研究了准二维电子气体中电子在AlGaAs/GaAs界面上的散射,电离了位于AlGaAs中的杂质。我们使用多重散射(t矩阵)技术来计算电子的迁移率和束缚态能。
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Functional dependence of electron mobility on the distance of remote donor impurities from the interface in AlGaAs/GaAs heterostructures

We investigate the scattering of electrons in a quasi-two-dimensional electron gas at the AlGaAs/GaAs interface, off ionized impurities located in AlGaAs. We use multiple-scattering (t-matrix) techniques to calculate the mobility and bound state energy of the electrons.

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