S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner
{"title":"湿氧化Si/SiO2界面的射频等离子体退火效应","authors":"S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner","doi":"10.1002/PSSA.2210980239","DOIUrl":null,"url":null,"abstract":"Radio frequency (rf) O2-plasma treatments produce markedly annealing effects on wet oxidized Si/SiO2-interfaces being more pronounced at higher substrate temperatures (300°C). This effect may be understood by plasma generated hydrogen in the oxide layer. \n \n \n \nSauerstoff-Hochfrequenzplasmabehandlungen erzeugen bei einem durch feuchte Oxidation hergestellten Si/SiO2-System ausgesprochene Ausheileffekte bei hoheren Substrat-Temperaturen (300°C). Diese Wirkung kann verstanden werden, wenn man eine Wasserstofffreisetzung im Oxid durch das Plasma annimmt.","PeriodicalId":90917,"journal":{"name":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","volume":"331 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"RF Plasma Annealing Effects at the Wet Oxidized Si/SiO2 Interface\",\"authors\":\"S. Alexandrova, A. Szekeres, W. Füssel, H. Flietner\",\"doi\":\"10.1002/PSSA.2210980239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Radio frequency (rf) O2-plasma treatments produce markedly annealing effects on wet oxidized Si/SiO2-interfaces being more pronounced at higher substrate temperatures (300°C). This effect may be understood by plasma generated hydrogen in the oxide layer. \\n \\n \\n \\nSauerstoff-Hochfrequenzplasmabehandlungen erzeugen bei einem durch feuchte Oxidation hergestellten Si/SiO2-System ausgesprochene Ausheileffekte bei hoheren Substrat-Temperaturen (300°C). Diese Wirkung kann verstanden werden, wenn man eine Wasserstofffreisetzung im Oxid durch das Plasma annimmt.\",\"PeriodicalId\":90917,\"journal\":{\"name\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"volume\":\"331 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/PSSA.2210980239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSA.2210980239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
RF Plasma Annealing Effects at the Wet Oxidized Si/SiO2 Interface
Radio frequency (rf) O2-plasma treatments produce markedly annealing effects on wet oxidized Si/SiO2-interfaces being more pronounced at higher substrate temperatures (300°C). This effect may be understood by plasma generated hydrogen in the oxide layer.
Sauerstoff-Hochfrequenzplasmabehandlungen erzeugen bei einem durch feuchte Oxidation hergestellten Si/SiO2-System ausgesprochene Ausheileffekte bei hoheren Substrat-Temperaturen (300°C). Diese Wirkung kann verstanden werden, wenn man eine Wasserstofffreisetzung im Oxid durch das Plasma annimmt.
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