纳米结构硅提供了前所未有的光学器件

R. Halir, A. Ortega-Moñux, P. Cheben, G. Wanguemert-Perez, J. Schmid, Í. Molina-Fernández
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引用次数: 1

摘要

片上光学和光子器件是光通信、传感和量子物理等领域取得重大进展的关键。这些集成设备在单个芯片上(即在几平方毫米内)实现复杂的光学功能,否则在使用大块光学元件时可能会占用整个光学表。目前,许多商用光子芯片是由III-V族材料(即包含元素周期表中的13族和15族元素)制成的,例如磷化铟。在过去的十年里,基于第IV族材料(第14族元素,特别是硅和锗)的集成光子系统引起了很多关注,世界各地的研究小组以及IBM和英特尔等工业企业都在开发这种系统。硅光子学的主要优势是可以利用微电子工业的CMOS基础设施,潜在地导致大批量和低成本的制造。然而,在性能和光带宽方面——器件可以精确处理的光波长(颜色)范围——许多集成光子器件还无法与它们的体光学器件竞争。在这里,我们提出了一种新的硅光波导器件,它提供高性能和超宽带操作,并且占地面积非常小。在光子器件中,光的流动是由折射率的变化控制的,工程师们在一系列材料中利用折射率来实现光学功能(例如,光波导)。在硅光子学中,材料的选择仅限于硅(折射率为3.5)、二氧化硅(折射率为1.4)和几种聚合物(折射率为1.6),这阻碍了高性能、高带宽器件的制造。使用不同厚度的材料层可以克服这一限制,从而产生不同的图1。基于纳米结构硅多模干涉耦合器的新型片上光学分束器的示意图显示了输入(左)和输出(右)光波。
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Nanostructured silicon delivers unprecedented optical devices
On-chip optical and photonic devices are key to major advances in fields as diverse as optical communications, sensing, and quantum physics. These integrated devices enable complex optical functionalities on a single chip (i.e., within a few square millimeters) that might otherwise occupy an entire optical table when implemented with bulk optical components. Currently, many commercial photonic chips are made from group III–V materials (i.e., containing elements in groups 13 and 15 of the periodic table), such as indium phosphide. Over the past decade, integrated photonic systems based on group IV materials—elements in group 14, particularly silicon and germanium—have drawn a lot of attention and are being developed by research groups around the world as well as industrial players, such as IBM and Intel. The main advantage of silicon photonics is that the CMOS infrastructure of the micro-electronics industry can be leveraged, potentially leading to high-volume and low-cost fabrication. However, in terms of performance and optical bandwidth—the range of optical wavelengths (colors) that a device can process accurately—many integrated photonic devices cannot yet compete with their bulkoptics counterparts. Here, we present a new silicon optical waveguide device that offers high performance and ultra-broad bandwidth operation with a very compact footprint. In photonic devices, the flow of light is governed by variations in refractive index, which engineers exploit in a range of materials to enable optical functionalities (e.g., for optical waveguides). In silicon photonics, the choice of materials is limited to silicon (with a refractive index n 3.5), silicon dioxide (n 1.4), and several polymers (n 1.6), which hinders the fabrication of high-performance, high-bandwidth devices. This limitation can be overcome using layers of materials with different thicknesses, which produce different Figure 1. A schematic representation of a new on-chip optical beamsplitter based on a nanostructured silicon multimode interference coupler showing the input (left) and output (right) light waves.
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