高电场下高增益砷化镓光导半导体开关的抑制

2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) Pub Date : 2015-11-12 DOI:10.1109/IRMMW-THZ.2015.7327660

Ming Xu, W. Shi, Xiaoqing He, Zhijin Yan, Hong Liu

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摘要

为了探索GaAs光导半导体开关(PCSS)的高效太赫兹发射极，必须实现高电场下高增益模式的抑制。在32kv条件下，实现了高场域的红外激活和抑制，获得了良好的保持特性。

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Suppression of high gain GaAs photoconductive semiconductor switch at high electric field

In order to explore the efficient THz emitter with GaAs photoconductive semiconductor switch (PCSS), it's necessary to achieve the suppression of high gain mode in high electric field. The infrared activation and inhibition of high field domains is achieved and the good hold-off characteristics is obtained with 32 kV.

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2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)

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