高有序含硅氟嵌段共聚物的合成

IF 0.4 4区化学 Q4 POLYMER SCIENCE Journal of Photopolymer Science and Technology Pub Date : 2021-06-11 DOI:10.2494/photopolymer.34.329

Jianuo Zhou, Xuemiao Li, H. Deng

{"title":"高有序含硅氟嵌段共聚物的合成","authors":"Jianuo Zhou, Xuemiao Li, H. Deng","doi":"10.2494/photopolymer.34.329","DOIUrl":null,"url":null,"abstract":"Series of Si-containing, especially polyhedral oligomeric silsesquioxane (POSS)-containing fluorinated block copolymers (BCPs), poly(styryl polyhedral oligomeric silsesquioxane)- block -poly(hepatafluorobutyl methacrylate) (PStPOSS- b -PHFBMA) were synthesized via living polymerizations. The flory-huggins parameter ( χ , at 150 ºC) of PStPOSS- b -PHFBMA BCP was 0.060. Highly ordered hexagonal domain with 13.2 nm d spacing was observed by small-angle X-ray scattering (SAXS) after 10 h 160 ºC annealing, exhibiting rough line patterns in scanning electron microscope (SEM). SiO 1.5 residue (13.7 wt%) still remained after 700 ºC sintering in thermal gravimetric analysis (TGA).","PeriodicalId":16810,"journal":{"name":"Journal of Photopolymer Science and Technology","volume":"426 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2021-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis of Highly Ordered Si-Containing Fluorinated Block Copolymers\",\"authors\":\"Jianuo Zhou, Xuemiao Li, H. Deng\",\"doi\":\"10.2494/photopolymer.34.329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Series of Si-containing, especially polyhedral oligomeric silsesquioxane (POSS)-containing fluorinated block copolymers (BCPs), poly(styryl polyhedral oligomeric silsesquioxane)- block -poly(hepatafluorobutyl methacrylate) (PStPOSS- b -PHFBMA) were synthesized via living polymerizations. The flory-huggins parameter ( χ , at 150 ºC) of PStPOSS- b -PHFBMA BCP was 0.060. Highly ordered hexagonal domain with 13.2 nm d spacing was observed by small-angle X-ray scattering (SAXS) after 10 h 160 ºC annealing, exhibiting rough line patterns in scanning electron microscope (SEM). SiO 1.5 residue (13.7 wt%) still remained after 700 ºC sintering in thermal gravimetric analysis (TGA).\",\"PeriodicalId\":16810,\"journal\":{\"name\":\"Journal of Photopolymer Science and Technology\",\"volume\":\"426 1\",\"pages\":\"\"},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2021-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Photopolymer Science and Technology\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.2494/photopolymer.34.329\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"POLYMER SCIENCE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Photopolymer Science and Technology","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.2494/photopolymer.34.329","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}

引用次数: 0

摘要

采用活聚合法合成了系列含硅特别是多面体低聚硅氧烷(POSS)-含氟嵌段共聚物(bcp)、聚苯乙烯多面体低聚硅氧烷-嵌段聚肝氟甲基丙烯酸丁酯(PStPOSS- b - phfbma)。PStPOSS- b - phfbma BCP的flory-huggins参数(χ，在150ºC时)为0.060。在160℃退火10 h后，通过小角x射线散射(SAXS)观察到高度有序的六方畴，其间距为13.2 nm，在扫描电镜(SEM)下显示出粗糙的线条图案。热重分析(TGA)中，烧结700℃后仍有sio1.5残留(13.7 wt%)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Synthesis of Highly Ordered Si-Containing Fluorinated Block Copolymers

Series of Si-containing, especially polyhedral oligomeric silsesquioxane (POSS)-containing fluorinated block copolymers (BCPs), poly(styryl polyhedral oligomeric silsesquioxane)- block -poly(hepatafluorobutyl methacrylate) (PStPOSS- b -PHFBMA) were synthesized via living polymerizations. The flory-huggins parameter ( χ , at 150 ºC) of PStPOSS- b -PHFBMA BCP was 0.060. Highly ordered hexagonal domain with 13.2 nm d spacing was observed by small-angle X-ray scattering (SAXS) after 10 h 160 ºC annealing, exhibiting rough line patterns in scanning electron microscope (SEM). SiO 1.5 residue (13.7 wt%) still remained after 700 ºC sintering in thermal gravimetric analysis (TGA).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Photopolymer Science and Technology 化学-高分子科学

CiteScore

1.50

自引率

25.00%

发文量

审稿时长

4-8 weeks

期刊介绍： Journal of Photopolymer Science and Technology is devoted to the publication of articles on the scientific progress and the technical development of photopolymers.