玻璃和液体半导体的传导

N. Mott
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引用次数: 10

摘要

人们经常说,与晶体相反,非晶半导体的电导率值对其组成相对不敏感。这可以通过假设玻璃中的每个原子有尽可能多的最近邻来解释(Ge, 4;如,3;Te, 2),这样就没有自由电子可以携带电流。将审查这一概念的有效性;对于一些非晶态薄膜(Mg-Bi)则不成立,因为它们的键合不强。还有一些玻璃,当加热到软化点以上时,似乎改变了它们的配位数,变成了金属。概述了描述这些结果所需的理论模型。在液态金属和大多数非晶金属薄膜中,齐曼理论应该是适用的,其电导率等于Se2L/12π 3l,其中S为费米表面积,L为平均自由程。当它约为3000 Ω-1 cm-1时,L相当于原子间的距离,不能再小了。对于电导率较低的材料,如液体Te,“赝隙”会影响电导率。最低可能的金属电导率约为200 Ω-1 cm-1。对于电导率较低的材料(液体或非结晶固体),电流要么是由于电子被激发到“迁移率肩”,要么是由于杂质传导中常见的跳变传导。在透明材料中必须存在实隙(与伪隙相反),并且可以根据紧密结合近似来理解。
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Conduction in glassy and liquid semiconductors
It is frequently stated that amorphous semiconductors have, in contrast to crystals, a value of the conductivity which is relatively insensitive to composition. This is explained by assuming that each atom in a glass has as many nearest neighbours as the number of bonds it can from (Ge, 4; As, 3; Te, 2), so that there are no free electrons available to carry a current. The validity of this concept will be examined; it is not true for some amorphous films (Mg-Bi) which are not strongly bonded. Also some glasses, when heated above the softening point, seem to change their coordination numbers and become metallic.The theoretical models necessary to describe these results are outlined. In liquid metals and most amorphous metal films, the Ziman theory should be applicable, giving a conductivity equal to Se2L/12π3ħ, where S is the Fermi surface area and L the mean free path. When this is about 3000 Ω–1 cm–1, L is comparable with the distance between atoms and it cannot be smaller. For materials such as liquid Te for which the conductivity is lower, a “pseudogap” affects the conductivity. The lowest possible metallic conductivity is about 200 Ω–1 cm–1. For materials (liquids or non-crystalline solids) with lower conductivity, the current is due either to electrons excited to the “mobility shoulder” or to hopping conduction of the kind familiar in impurity conduction. A real gap (as contrasted with a pseudogap) must exist in transparent materials, and can be understood in terms of the tight-binding approximation.
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