{"title":"基于Pb1−xSnxTe(In)的无源太赫兹光探测系统直接探测器","authors":"D. Khokhlov","doi":"10.1109/IRMMW-THZ.2011.6104934","DOIUrl":null,"url":null,"abstract":"Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"40 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct detectors for passive terahertz photodetecting systems based on Pb1−xSnxTe(In)\",\"authors\":\"D. Khokhlov\",\"doi\":\"10.1109/IRMMW-THZ.2011.6104934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.\",\"PeriodicalId\":6353,\"journal\":{\"name\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"volume\":\"40 1\",\"pages\":\"1-1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Conference on Infrared, Millimeter, and Terahertz Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THZ.2011.6104934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6104934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct detectors for passive terahertz photodetecting systems based on Pb1−xSnxTe(In)
Physical principles of operation of the photodetecting devices based on the group III-doped IV-VI semiconductors are presented. We report on the performance of lead telluride-based single direct terahertz detectors. Architecture of a system for passive terahertz vision of room-temperature objects is presented.
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