铜中小空位团簇的迁移能计算

M. J. Sabochick, S. Yip
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引用次数: 28

摘要

利用一种新的能量最小化方案和第一性原理原子间势,计算出铜中三、四空位的迁移能分别为0.56 eV和0.38 eV。与先前计算的单能级和距离迁移能分别为0.82和0.55 eV相比,表明铜中的三能级和四能级具有很强的迁移能力。利用计算得到的结合能和迁移能,建立了一个速率方程模型,用于预测淬火和电子辐照实验中空位缺陷的浓度。模型预测的活化能遵循与退火实验中测量的相同的一般行为。该模型预测的三缺陷和四缺陷的最大浓度非常低(小于0.001 p.p.m.),这表明这些缺陷许多不能用实验技术观察到。
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Migration energy calculations for small vacancy clusters in copper
The migration energies of tri- and tetravacancies in copper are calculated to be 0.56 eV and 0.38 eV, respectively, using a new energy minimisation scheme and a first-principles interatomic potential. Comparison with the previously calculated single and divacancy migration energies of 0.82 and 0.55 eV, respectively, indicates that the tri- and tetravacancies are very mobile in copper. The calculated binding and migration energies were used in a rate equation model which predicts the concentrations of vacancy defects during quenching and electron-irradiation experiments. The predicted activation energy of the model follows the same general behaviour as that measured in annealing experiments. The maximum concentrations of tri- and tetravacancies predicted by the model are very low (less than 0.001 p.p.m.), which suggests that these defects many not be observable using experimental techniques.
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