CdPS3低温相和室温相的第一性原理LCAO研究

A. Kuzmin
{"title":"CdPS3低温相和室温相的第一性原理LCAO研究","authors":"A. Kuzmin","doi":"10.1063/10.0002477","DOIUrl":null,"url":null,"abstract":"The electronic and atomic structure of a bulk 2D layered van-der-Waals compound CdPS3 was studied in the low (R3) and room (C2/m) temperature phases using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid meta exchange-correlation M06 functional. The calculation results reproduce well the experimental crystallographic parameters. The value of the indirect band gap Eg=3.4 eV for the room-temperature monoclinic C2/m phase is close to the experimental one, while the indirect band gap Eg=3.3 eV was predicted for the low-temperature trigonal R3 phase. The effect of hydrostatic pressure on the band gap in both phases was studied in the pressure range from 0 to 40 GPa. In both cases, the pressure dependence of the band gap passes through a maximum, but at different pressures. In the R3 phase, the band gap reaches its maximum value of ~4 eV at ~30 GPa, whereas in the C2/m phase, the maximum value of ~3.6 eV is reached already at ~8 GPa.","PeriodicalId":8467,"journal":{"name":"arXiv: Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"First-principles LCAO study of the low- and room-temperature phases of CdPS3\",\"authors\":\"A. Kuzmin\",\"doi\":\"10.1063/10.0002477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electronic and atomic structure of a bulk 2D layered van-der-Waals compound CdPS3 was studied in the low (R3) and room (C2/m) temperature phases using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid meta exchange-correlation M06 functional. The calculation results reproduce well the experimental crystallographic parameters. The value of the indirect band gap Eg=3.4 eV for the room-temperature monoclinic C2/m phase is close to the experimental one, while the indirect band gap Eg=3.3 eV was predicted for the low-temperature trigonal R3 phase. The effect of hydrostatic pressure on the band gap in both phases was studied in the pressure range from 0 to 40 GPa. In both cases, the pressure dependence of the band gap passes through a maximum, but at different pressures. In the R3 phase, the band gap reaches its maximum value of ~4 eV at ~30 GPa, whereas in the C2/m phase, the maximum value of ~3.6 eV is reached already at ~8 GPa.\",\"PeriodicalId\":8467,\"journal\":{\"name\":\"arXiv: Materials Science\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"arXiv: Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/10.0002477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv: Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/10.0002477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

采用原子轨道周期性线性组合方法和杂化元交换相关M06泛函,研究了块状二维层状范德瓦尔斯化合物CdPS3在低温(R3)和室温(C2/m)相的电子和原子结构。计算结果较好地再现了实验晶体学参数。室温单斜C2/m相的间接带隙Eg=3.4 eV与实验值接近,而低温三角R3相的间接带隙Eg=3.3 eV是预测值。在0 ~ 40 GPa的压力范围内,研究了静水压力对两相带隙的影响。在这两种情况下,带隙的压力依赖性都达到最大值,但在不同的压力下。在R3相中,带隙在~30 GPa时达到最大值~4 eV,而在C2/m相中,带隙在~8 GPa时已经达到最大值~3.6 eV。
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First-principles LCAO study of the low- and room-temperature phases of CdPS3
The electronic and atomic structure of a bulk 2D layered van-der-Waals compound CdPS3 was studied in the low (R3) and room (C2/m) temperature phases using first-principles calculations within the periodic linear combination of atomic orbitals method with hybrid meta exchange-correlation M06 functional. The calculation results reproduce well the experimental crystallographic parameters. The value of the indirect band gap Eg=3.4 eV for the room-temperature monoclinic C2/m phase is close to the experimental one, while the indirect band gap Eg=3.3 eV was predicted for the low-temperature trigonal R3 phase. The effect of hydrostatic pressure on the band gap in both phases was studied in the pressure range from 0 to 40 GPa. In both cases, the pressure dependence of the band gap passes through a maximum, but at different pressures. In the R3 phase, the band gap reaches its maximum value of ~4 eV at ~30 GPa, whereas in the C2/m phase, the maximum value of ~3.6 eV is reached already at ~8 GPa.
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