{"title":"p-GaInP薄膜中2 LO声子的干涉和连续价间带跃迁","authors":"Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani","doi":"10.1109/IRMMW-THZ.2015.7327798","DOIUrl":null,"url":null,"abstract":"Quantum interference between two LO phonon modes and valence band states is investigated by Raman spectra of p-type Ga0.5In0.5P. The spectrum fitting analysis reveals the quantum interference features in asymmetric line shape, broadening, and peak shift. This finding suggests the possibility of the control of the absorption profile in THz frequency region.","PeriodicalId":6577,"journal":{"name":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","volume":"1 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interference of 2 LO phonon and continuum inter-valence band transition in p-GaInP film\",\"authors\":\"Hironori Sakamoto, B. Ma, K. Morita, Y. Ishitani\",\"doi\":\"10.1109/IRMMW-THZ.2015.7327798\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum interference between two LO phonon modes and valence band states is investigated by Raman spectra of p-type Ga0.5In0.5P. The spectrum fitting analysis reveals the quantum interference features in asymmetric line shape, broadening, and peak shift. This finding suggests the possibility of the control of the absorption profile in THz frequency region.\",\"PeriodicalId\":6577,\"journal\":{\"name\":\"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)\",\"volume\":\"1 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRMMW-THZ.2015.7327798\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2015.7327798","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interference of 2 LO phonon and continuum inter-valence band transition in p-GaInP film
Quantum interference between two LO phonon modes and valence band states is investigated by Raman spectra of p-type Ga0.5In0.5P. The spectrum fitting analysis reveals the quantum interference features in asymmetric line shape, broadening, and peak shift. This finding suggests the possibility of the control of the absorption profile in THz frequency region.
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