同步辐射支持的高纵横比纳米制造

A. Chen, G. Liu, L. Jian, H. Moser
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引用次数: 0

摘要

同步辐射x射线光刻技术是一种重要的纳米光刻技术,在生产高纵横比纳米结构方面具有独特的优势。纳米尺度x射线光刻的最佳同步辐射谱通常在500 eV到2 keV之间。本文介绍了新加坡同步加速器(SSLS)纳米制造项目中采用近距离x射线光刻技术进行纳米加工的主要方法、设备、工艺参数和初步结果。通过这种方法,已经成功地实现了特征尺寸低至200纳米、宽高比高达10的纳米结构。
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SYNCHROTRON-RADIATION-SUPPORTED HIGH-ASPECT-RATIO NANOFABRICATION
X-ray lithography with synchrotron radiation is an important nanolithographic tool which has unique advantages in the production of high aspect ratio nanostructures. The optimum synchrotron radiation spectrum for nanometer scale X-ray lithography is normally in the range of 500 eV to 2 keV. In this paper, we present the main methods, equipment, process parameters and preliminary results of nanofabrication by proximity X-ray lithography within the nanomanufacturing program pursued by Singapore Synchrotron Light Source (SSLS). Nanostructures with feature sizes down to 200 nm and an aspect ratio up to 10 have been successfully achieved by this approach.
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