掺as的Sin (n = 1-8)团簇结构与性质的理论研究

Aimei Gao, Guoliang Li, Yu Chang, Hongyu Chen, Qian-shu Li
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Edge-capping with a silicon atom to <strong>2n</strong> <!-->−<!--> <strong>1</strong>, yields the lowest energy structure of the neutral AsSi<sub>3</sub> cluster, a deformed planar rhombus structure (<strong>3n</strong> <!-->−<!--> <strong>1</strong>). The ground state structure of the neutral AsSi<sub>4</sub> cluster is predicted to have a trigonal bipyramid form (<strong>4n</strong> <!-->−<!--> <strong>1</strong>). Adding one, two, or three Si atoms to different positions in this <strong>4n</strong> <!-->−<!--> <strong>1</strong> structure gives the lowest energy structures of the neutral AsSi<sub>5</sub>, AsSi<sub>6</sub>, and AsSi<sub>7</sub> clusters (<strong>5n</strong> <!-->−<!--> <strong>1</strong>, <strong>6n</strong> <!-->−<!--> <strong>1</strong>, and <strong>7n</strong> <!-->−<!--> <strong>1</strong>), respectively. The global minimum of neutral AsSi<sub>8</sub> (<strong>8n</strong> <!-->−<!--> <strong>1</strong>) can be gained by capping the most stable AsSi<sub>7</sub> structure with a silicon atom. The ground states of the neutral AsSi<em><sub>n</sub></em> clusters are all doublet. The three low-energy states of ionic <span><math><mrow><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>+</mo></mrow></msubsup><mo>/</mo><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>-</mo></mrow></msubsup></mrow></math></span> have very similar structures to those of their neutral AsSi<em><sub>n</sub></em> counterparts, but their orders of stability are somewhat changed. Except for the smaller AsSi<sup>+</sup>, the most stable <span><math><mrow><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>+</mo></mrow></msubsup><mo>/</mo><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>-</mo></mrow></msubsup></mrow></math></span> isomers all have singlet electronic states. Based on the optimized geometries, various energetic properties, including the incremental binding energies, the gaps between the highest occupied molecular orbital and lowest unoccupied molecular orbital, the adiabatic ionization potentials, and electron affinities, are calculated for the most stable isomers of AsSi<em><sub>n</sub></em>/<span><math><mrow><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>+</mo></mrow></msubsup><mo>/</mo><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mi>n</mi></mrow><mrow><mo>-</mo></mrow></msubsup></mrow></math></span>. All the results indicate that <span><math><mrow><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mn>4</mn></mrow><mrow><mo>-</mo></mrow></msubsup></mrow></math></span> and <span><math><mrow><msubsup><mrow><mtext>AsSi</mtext></mrow><mrow><mn>7</mn></mrow><mrow><mo>-</mo></mrow></msubsup></mrow></math></span> have the highest stability of the investigated clusters. 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The most stable isomer of the neutral AsSi<sub>2</sub> cluster has an isosceles triangle structure (<strong>2n</strong> <!-->−<!--> <strong>1</strong>). Edge-capping with a silicon atom to <strong>2n</strong> <!-->−<!--> <strong>1</strong>, yields the lowest energy structure of the neutral AsSi<sub>3</sub> cluster, a deformed planar rhombus structure (<strong>3n</strong> <!-->−<!--> <strong>1</strong>). The ground state structure of the neutral AsSi<sub>4</sub> cluster is predicted to have a trigonal bipyramid form (<strong>4n</strong> <!-->−<!--> <strong>1</strong>). Adding one, two, or three Si atoms to different positions in this <strong>4n</strong> <!-->−<!--> <strong>1</strong> structure gives the lowest energy structures of the neutral AsSi<sub>5</sub>, AsSi<sub>6</sub>, and AsSi<sub>7</sub> clusters (<strong>5n</strong> <!-->−<!--> <strong>1</strong>, <strong>6n</strong> <!-->−<!--> <strong>1</strong>, and <strong>7n</strong> <!-->−<!--> <strong>1</strong>), respectively. 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引用次数: 9

摘要

在B3LYP/ 6-311 +G*理论水平上系统地研究了砷掺杂的小硅团簇AsSin/AsSin+/AsSin- (n = 1-8)。中性AsSi2簇的最稳定异构体具有等腰三角形结构(2n−1)。硅原子在2n−1上的边缘封顶产生中性AsSi3簇的最低能量结构,即变形的平面菱形结构(3n−1)。中性AsSi4簇的基态结构预计具有三角双棱锥体形式(4n−1)。在这个4n−1结构中,将三个Si原子放到不同的位置,分别得到中性的AsSi5、AsSi6和AsSi7簇(5n−1、6n−1和7n−1)的最低能量结构。中性AsSi8 (8n−1)的全局最小值可以通过用硅原子覆盖最稳定的AsSi7结构来获得。中性AsSin簇的基态都是重态。离子AsSin+/AsSin-的三个低能态与它们的中性AsSin对应物具有非常相似的结构,但它们的稳定顺序有所改变。除了较小的AsSi+外,最稳定的AsSin+/AsSin-异构体都具有单重态电子。基于优化的几何结构,计算了最稳定的AsSin/AsSin+/AsSin-异构体的各种能量性质,包括增量结合能、最高已占据轨道与最低未占据轨道之间的间隙、绝热电离势和电子亲和。结果表明,AsSi4-和AsSi7-具有最高的稳定性。自然键轨道分析表明,离域电子和多中心键可能是低能AsSin/AsSin+/AsSin-结构稳定的原因。
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Theoretical studies on the structures and properties of As-doped Sin (n = 1–8) clusters

The As-doped small silicon clusters AsSin/AsSin+/AsSin- (n = 1–8) have been systematically investigated at the B3LYP/6–311+G* level of theory. The most stable isomer of the neutral AsSi2 cluster has an isosceles triangle structure (2n  1). Edge-capping with a silicon atom to 2n  1, yields the lowest energy structure of the neutral AsSi3 cluster, a deformed planar rhombus structure (3n  1). The ground state structure of the neutral AsSi4 cluster is predicted to have a trigonal bipyramid form (4n  1). Adding one, two, or three Si atoms to different positions in this 4n  1 structure gives the lowest energy structures of the neutral AsSi5, AsSi6, and AsSi7 clusters (5n  1, 6n  1, and 7n  1), respectively. The global minimum of neutral AsSi8 (8n  1) can be gained by capping the most stable AsSi7 structure with a silicon atom. The ground states of the neutral AsSin clusters are all doublet. The three low-energy states of ionic AsSin+/AsSin- have very similar structures to those of their neutral AsSin counterparts, but their orders of stability are somewhat changed. Except for the smaller AsSi+, the most stable AsSin+/AsSin- isomers all have singlet electronic states. Based on the optimized geometries, various energetic properties, including the incremental binding energies, the gaps between the highest occupied molecular orbital and lowest unoccupied molecular orbital, the adiabatic ionization potentials, and electron affinities, are calculated for the most stable isomers of AsSin/AsSin+/AsSin-. All the results indicate that AsSi4- and AsSi7- have the highest stability of the investigated clusters. Natural bond orbital analyses suggest that delocalized electrons and multi-centered bonds should be responsible for stabilizing the low-energy AsSin/AsSin+/AsSin- structures.

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