AIN薄膜的原子层外延生长

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI:10.1051/JPHYSCOL:19955120

Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson

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引用次数: 10

摘要

以alcl3和nh3为前驱体，采用原子层外延(ALE)技术制备了AlN薄膜。在500℃条件下的生长速率为1.0 A/循环。沉积在钠石灰玻璃衬底上的薄膜是多晶的，在[001]方向上表现出强烈的优先取向。x射线光电子能谱(XPS)测量表明，薄膜中含有氧和氯作为杂质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Atomic Layer Epitaxy Growth of AIN Thin Films

AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.

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Le Journal De Physique Colloques

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