AIN薄膜的原子层外延生长

Le Journal De Physique Colloques Pub Date : 1995-06-01 DOI:10.1051/JPHYSCOL:19955120

Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson

{"title":"AIN薄膜的原子层外延生长","authors":"Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson","doi":"10.1051/JPHYSCOL:19955120","DOIUrl":null,"url":null,"abstract":"AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"156 1","pages":"1021-1027"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Atomic Layer Epitaxy Growth of AIN Thin Films\",\"authors\":\"Kai-Erik Elers, M. Ritala, M. Leskelä, Leena‐Sisko Johansson\",\"doi\":\"10.1051/JPHYSCOL:19955120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.\",\"PeriodicalId\":17944,\"journal\":{\"name\":\"Le Journal De Physique Colloques\",\"volume\":\"156 1\",\"pages\":\"1021-1027\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Le Journal De Physique Colloques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1051/JPHYSCOL:19955120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Le Journal De Physique Colloques","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/JPHYSCOL:19955120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

以alcl3和nh3为前驱体，采用原子层外延(ALE)技术制备了AlN薄膜。在500℃条件下的生长速率为1.0 A/循环。沉积在钠石灰玻璃衬底上的薄膜是多晶的，在[001]方向上表现出强烈的优先取向。x射线光电子能谱(XPS)测量表明，薄膜中含有氧和氯作为杂质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Atomic Layer Epitaxy Growth of AIN Thin Films

AlN thin films were grown by the Atomic Layer Epitaxy (ALE) technique employing AlCl 3 and NH 3 as precursors. A growth rate of 1.0 A/cycle was obtained in experiments carried out at 500 °C. The films deposited onto soda lime glass substrates were polycrystalline exhibiting a strong preferred orientation in the [001] direction. X-ray Photoelectron Spectroscopy (XPS) measurements revealed that the films contained oxygen and chlorine as impurities.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Le Journal De Physique Colloques

自引率

0.00%

发文量