亚单层B/Si(110)和(Al, B)/Si(110)体系中有序表面相的形成

A.V. Zotov, S.V. Ryzhkov, V.G. Lifshits
{"title":"亚单层B/Si(110)和(Al, B)/Si(110)体系中有序表面相的形成","authors":"A.V. Zotov,&nbsp;S.V. Ryzhkov,&nbsp;V.G. Lifshits","doi":"10.1016/0167-2584(93)91011-C","DOIUrl":null,"url":null,"abstract":"<div><p>The B/Si(110) system with B coverages below 0.1 ML has been studied by LEED-AES (low energy electron diffraction-Auger electron spectroscopy). The (<span><math><mtext>10</mtext><mtext>0</mtext><mtext>− 2</mtext><mtext>1</mtext></math></span>) reconstruction has been found to form at above 0.07 ML of B. This reconstruction is a particular case of a more general type of superstructures with basic translation vectors, <span><math><mtext>a</mtext><msub><mi></mi><mn>s</mn></msub><mtext>=(n/2[1</mtext><mtext>1</mtext><mtext>10]</mtext></math></span> and <span><math><mtext>b</mtext><msub><mi></mi><mn>s</mn></msub><mtext>=[1</mtext><mtext>1</mtext><mtext>11]</mtext></math></span>. Reconstructions of this type are observed for a number of adsorbates (Ge, AL, Sb) on the Si(110) surface. The factor <em>n</em> equals 8, 9 and 14 for Ge/Si(110), Al/Si(110) and Sb/Si(110) reconstructions, respectively. For the B/Si(110) reconstruction <em>n</em> = 10, but ordering along the [<span><math><mtext>1</mtext></math></span>10] direction is not perfect while the periodicity along the [1<span><math><mtext>1</mtext></math></span>1] direction is well-defined. The deposition of 0.05 to 0.15 ML of Al onto the B/Si(110) surface produces a well-ordered structure of the above-described type with <em>n</em> = 12. The deposited Al atoms replace the B atoms reducing the boron surface concentration.</p></div>","PeriodicalId":101188,"journal":{"name":"Surface Science Letters","volume":"295 1","pages":"Pages L1005-L1010"},"PeriodicalIF":0.0000,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0167-2584(93)91011-C","citationCount":"0","resultStr":"{\"title\":\"Formation of ordered surface phases in submonolayer B/Si(110) and (Al, B)/Si(110) systems\",\"authors\":\"A.V. Zotov,&nbsp;S.V. Ryzhkov,&nbsp;V.G. Lifshits\",\"doi\":\"10.1016/0167-2584(93)91011-C\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The B/Si(110) system with B coverages below 0.1 ML has been studied by LEED-AES (low energy electron diffraction-Auger electron spectroscopy). The (<span><math><mtext>10</mtext><mtext>0</mtext><mtext>− 2</mtext><mtext>1</mtext></math></span>) reconstruction has been found to form at above 0.07 ML of B. This reconstruction is a particular case of a more general type of superstructures with basic translation vectors, <span><math><mtext>a</mtext><msub><mi></mi><mn>s</mn></msub><mtext>=(n/2[1</mtext><mtext>1</mtext><mtext>10]</mtext></math></span> and <span><math><mtext>b</mtext><msub><mi></mi><mn>s</mn></msub><mtext>=[1</mtext><mtext>1</mtext><mtext>11]</mtext></math></span>. Reconstructions of this type are observed for a number of adsorbates (Ge, AL, Sb) on the Si(110) surface. The factor <em>n</em> equals 8, 9 and 14 for Ge/Si(110), Al/Si(110) and Sb/Si(110) reconstructions, respectively. For the B/Si(110) reconstruction <em>n</em> = 10, but ordering along the [<span><math><mtext>1</mtext></math></span>10] direction is not perfect while the periodicity along the [1<span><math><mtext>1</mtext></math></span>1] direction is well-defined. The deposition of 0.05 to 0.15 ML of Al onto the B/Si(110) surface produces a well-ordered structure of the above-described type with <em>n</em> = 12. The deposited Al atoms replace the B atoms reducing the boron surface concentration.</p></div>\",\"PeriodicalId\":101188,\"journal\":{\"name\":\"Surface Science Letters\",\"volume\":\"295 1\",\"pages\":\"Pages L1005-L1010\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0167-2584(93)91011-C\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Science Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/016725849391011C\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Science Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/016725849391011C","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

采用LEED-AES(低能电子衍射-俄歇电子能谱)对B/Si(110)体系进行了研究。(100−21)重构被发现在高于0.07 ML b时形成,这种重构是具有基本平移向量的更一般类型的上层建筑的特殊情况,as=(n/2[1110]和bs=[1111]。在Si(110)表面上观察到许多吸附物(Ge, AL, Sb)的这种类型的重建。对于Ge/Si(110)、Al/Si(110)和Sb/Si(110)重构,因子n分别为8、9和14。对于B/Si(110)重构n = 10,但沿[110]方向的有序性不完善,而沿[111]方向的周期性很好。在B/Si(110)表面沉积0.05 ~ 0.15 ML的Al会产生n = 12的上述类型的有序结构。沉积的Al原子取代了B原子,降低了硼的表面浓度。
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Formation of ordered surface phases in submonolayer B/Si(110) and (Al, B)/Si(110) systems

The B/Si(110) system with B coverages below 0.1 ML has been studied by LEED-AES (low energy electron diffraction-Auger electron spectroscopy). The (100− 21) reconstruction has been found to form at above 0.07 ML of B. This reconstruction is a particular case of a more general type of superstructures with basic translation vectors, as=(n/2[1110] and bs=[1111]. Reconstructions of this type are observed for a number of adsorbates (Ge, AL, Sb) on the Si(110) surface. The factor n equals 8, 9 and 14 for Ge/Si(110), Al/Si(110) and Sb/Si(110) reconstructions, respectively. For the B/Si(110) reconstruction n = 10, but ordering along the [110] direction is not perfect while the periodicity along the [111] direction is well-defined. The deposition of 0.05 to 0.15 ML of Al onto the B/Si(110) surface produces a well-ordered structure of the above-described type with n = 12. The deposited Al atoms replace the B atoms reducing the boron surface concentration.

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Subject index Author index Auger electron spectroscopy as a tool for measuring intramolecular charges of adsorbed molecules Structural characterization of a (krypton-methane) film adsorbed on (0001) graphite Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption
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