氢压力对四极射频溅射沉积非晶硅薄膜的影响

Applications of Surface Science Pub Date : 1985-05-01 DOI:10.1016/0378-5963(85)90222-3

Yasuo Gekka, Hiroshi Asai, Tsuyoshi Temma, Yoh-ichi Yasumura

{"title":"氢压力对四极射频溅射沉积非晶硅薄膜的影响","authors":"Yasuo Gekka, Hiroshi Asai, Tsuyoshi Temma, Yoh-ichi Yasumura","doi":"10.1016/0378-5963(85)90222-3","DOIUrl":null,"url":null,"abstract":"<div><p>Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of quartz substrates using the tetrode RF sputtering technique. The conditions for film deposition were controlled by changing the pressure ratio of hydrogen to argon gas, ξ, in the atmospheric gas. We studied the dependence of the optical and electrical properties of deposited films on ξ, and discuss the complex changes of optical absorption coefficient, α, and electrical conductivity, σ, at <span><math><mtext>ξ ≧ 20%</mtext></math></span> in terms of the silicon-hydrogen configuration from the results of infra-red absorption and SEM measurements.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 899-907"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90222-3","citationCount":"3","resultStr":"{\"title\":\"Effect of hydrogen pressure on the deposition of amorphous silicon films by tetrode RF sputtering\",\"authors\":\"Yasuo Gekka, Hiroshi Asai, Tsuyoshi Temma, Yoh-ichi Yasumura\",\"doi\":\"10.1016/0378-5963(85)90222-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of quartz substrates using the tetrode RF sputtering technique. The conditions for film deposition were controlled by changing the pressure ratio of hydrogen to argon gas, ξ, in the atmospheric gas. We studied the dependence of the optical and electrical properties of deposited films on ξ, and discuss the complex changes of optical absorption coefficient, α, and electrical conductivity, σ, at <span><math><mtext>ξ ≧ 20%</mtext></math></span> in terms of the silicon-hydrogen configuration from the results of infra-red absorption and SEM measurements.</p></div>\",\"PeriodicalId\":100105,\"journal\":{\"name\":\"Applications of Surface Science\",\"volume\":\"22 \",\"pages\":\"Pages 899-907\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0378-5963(85)90222-3\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applications of Surface Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0378596385902223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

采用四极射频溅射技术在石英衬底表面制备了氢化非晶硅(a-Si:H)薄膜。通过改变大气中氢气与氩气的压力比ξ来控制薄膜沉积的条件。我们研究了沉积薄膜的光电性能与ξ值的关系，并从红外吸收和扫描电镜的测量结果讨论了在ξ≧20%时硅氢结构的光学吸收系数α和电导率σ的复杂变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Effect of hydrogen pressure on the deposition of amorphous silicon films by tetrode RF sputtering

Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of quartz substrates using the tetrode RF sputtering technique. The conditions for film deposition were controlled by changing the pressure ratio of hydrogen to argon gas, ξ, in the atmospheric gas. We studied the dependence of the optical and electrical properties of deposited films on ξ, and discuss the complex changes of optical absorption coefficient, α, and electrical conductivity, σ, at $ξ ≧ 20%$ in terms of the silicon-hydrogen configuration from the results of infra-red absorption and SEM measurements.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助