A. Gahtar, S. Benramache, A. Ammari, A. Boukhachem
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引用次数: 1
摘要
采用325±5℃的喷雾热解法在玻璃衬底上沉积了硫化镍(NiS)薄膜。以六水合硝酸镍和硫脲为原料合成前驱体水溶液。采用x射线衍射(XRD)、扫描电镜(SEM)、紫外可见光谱(UV-visible spectroscopy)和四探针电学测量对其结构、形态、光学和电学性能进行了表征。XRD分析证实了NiS薄膜的六方结构,发现其沿[010]方向结晶,平均晶粒尺寸为10.5 nm。在P63/mmc空间群中,晶格参数为a = b = 3.420 Å, c = 5.300 Å。通过透射率和反射率测量研究了薄膜的光学特性。结果表明,该材料的直接光学带隙为1.03 eV。元素组成分析证实了Ni和S的存在,化学计量比(Ni/S)为1.05。形貌分析显示,在所有扫描区域均为均匀无裂纹,紧凑的外观和颗粒状表面。表面平均粗糙度为6.48 nm。另一方面,薄膜在室温下表现出较高的电导率,约为1.10 × 105 S/cm。上述结果表明,本研究制备的NiS具有良好的结晶性、致密的形貌、良好的化学计量比和较高的电导率;因此,它作为一种潜在的候选材料应用于超级电容器作为电极材料。
Study of the Structural, Optical, Electrical and Morphological Properties of Nickel Sulfide Thin Films Used in Supercapacitors
Abstract Nickel sulfide (NiS) thin film has been deposited on glass substrates by spray-pyrolysis at 325 ± 5 °C. The precursor aqueous solution was synthetized using hexahydrated nickel nitrates and thiourea. The structural, morphological, optical and electrical properties were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and four probes electrical measurements. The XRD analysis confirmed the hexagonal structure of NiS thin film, which was found to crystalize along [010] direction with an average crystallites size of 10.5 nm. The lattice parameters are a = b = 3.420 Å and c = 5.300 Å in the space group P63/mmc. The optical properties of the films were investigated through the transmittance and the reflectance measurements. The results revealed that the material exhibits a direct optical band gap of 1.03 eV. The elementary composition analysis confirmed the presence of Ni and S with a stoichiometry ratio (Ni/S) of 1.05. The morphology analysis revealed a homogenous crack-free, compact appearance and a granular surface in all scanned areas. The average roughness of the surface was 6.48 nm. On the other hand, the film exhibits a high electrical conductivity ca. 1.10 × 105 S/cm at room temperature. The above results show that the prepared NiS in this study has a good crystallization, dense morphology, good stoichiometric ratio and high conductivity; therefore, it stands as a potential candidate for application in supercapacitors as an electrode material.