掺Cr2+离子在II-VI型ZnS化合物中的电子能级——晶体场处理

S. Ivaşcu
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引用次数: 0

摘要

本文报道了在II-VI基体ZnS中掺杂Cr2+的晶体场和自旋哈密顿参数的建模结果,并考虑了该体系哈密顿量中进入的精细相互作用,模拟了该体系的能级方案。所有考虑到的这种相互作用的类型都有望提供有关吸收和发射带的新特性的信息,以及杂质离子电子态之间的非辐射跃迁。对所得结果进行了讨论,并与文献中类似的结果和实验数据进行了比较。
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Electronic Levels Of Cr2+ Ion Doped In II-VI Compounds Of ZnS – Crystal Field Treatment
Abstract The aim of present paper is to report the results on the modeling of the crystal field and spin-Hamiltonian parameters of Cr2+ doped in II-VI host matrix ZnS and simulate the energy levels scheme of such system taken into account the fine interactions entered in the Hamiltonian of the system. All considered types of such interaction are expected to give information on the new peculiarities of the absorption and emission bands, as well as of non-radiative transitions between the electronic states of impurity ions. The obtained results were disscused, compared with similar obtained results in literature and with experimental data.
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