铜掺杂对NiO薄膜光学和结构性能影响的研究

S. Benramache, B. Benhaoua, Hanane Guezzoun
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引用次数: 2

摘要

摘要本文采用自旋镀膜的方法,制备了六水氯化镍(0.8M)和氯化铜(II)脱水(Cu/Ni = 0、2.15、4.3、8.6和12.9 At.%)作为掺杂铜的氧化镍薄膜。将Cu掺杂NiO薄膜在600℃结晶温度下加热2 h,得到的薄膜厚度约为400 nm。制备的Cu掺杂NiO薄膜具有立方结构的多晶(200)峰。光学性能表明,制备的薄膜透光率约为70%。在12.9 at处,Cu掺杂NiO薄膜的带隙能量最小为3.85 eV。%,薄膜在8.6 at沉积。的乌尔巴赫能量最大值为425 meV。Cu掺杂NiO薄膜的电导率高达8.6%,为7 (Ω.cm)−1。所制备的Cu掺杂NiO薄膜由于存在相和较高的导电性,适合气敏应用。
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Study the Effect of Cu Doping on Optical and Structural Properties of NiO Thin Films
Abstract In this work, copper doped nickel oxide as the thin films have been elaborated by a spin coating method, the nickel chloride hexahydrate (0.8M) and copper (II) chloride dehydrate (Cu/Ni = 0, 2.15, 4.3, 8.6 and 12.9 At.%) were used to prepare the Cu doped NiO thin films. The Cu doped NiO thin films were heated at a crystallization temperature of 600 °C with 2 h. The obtained thin films by spin coater method have a film thickness in the order of 400 nm. The prepared Cu doped NiO thin films have a polycrystalline with cubic structure (200) peak was observed. The optical property shows that the prepared thin films have a transmittance of about 70 %. The Cu doped NiO thin films have minimum bandgap energy is 3.85 eV at 12.9 at.%, the thin film deposited at 8.6 at.% has the highest value of Urbach energy is 425 meV. The Cu doped NiO thin films have a high electrical conductivity of 8.6 at% it is 7 (Ω.cm)−1. The prepared Cu doped NiO thin film was suitable for gas sensing applications due to the existing phase and higher electrical conductivity.
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