G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu
{"title":"采用高k介电体改善SiC二极管击穿性能","authors":"G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu","doi":"10.1109/SMICND.2005.1558799","DOIUrl":null,"url":null,"abstract":"A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified","PeriodicalId":40779,"journal":{"name":"Teatro e Storia","volume":null,"pages":null},"PeriodicalIF":0.1000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Breakdown performances improvements of SiC diodes using high-k dielectrics\",\"authors\":\"G. Brezeanu, M. Badila, M. Brezeanu, F. Udrea, C. Boianceanu, I. Enache, F. Draghici, A. Visioreanu\",\"doi\":\"10.1109/SMICND.2005.1558799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified\",\"PeriodicalId\":40779,\"journal\":{\"name\":\"Teatro e Storia\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.1000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Teatro e Storia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2005.1558799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"THEATER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Teatro e Storia","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2005.1558799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"THEATER","Score":null,"Total":0}
Breakdown performances improvements of SiC diodes using high-k dielectrics
A classical implementation of the field plate technique is the oxide ramp termination. This paper presents improvements of the efficiency of this termination for SiC Schottky barrier diodes, obtained by using high-k dielectrics. The effect of the relative dielectrics permittivity and ramp parameters are investigated for punch-through and non punch-through devices. Optimal structure termination parameters were identified
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