多晶TiO2电极的光电化学性质:反常光效应

M. Ceraj-Cerić, M. Metikoš-Huković
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引用次数: 5

摘要

我们将光学和阻抗测量与传统电化学技术相结合,研究了溶液中存在可还原性吸附物时多晶TiO2电极上发生的光过程。半导体-电解质结被视为一个简单的肖特基势垒。用该模型描述了光势、光电流和电容。观察到的n型TiO2的异常大阴极光效应可能是由于阳极光产生或溶解氧吸附在电极表面的扩散。在n型半导体中,由于电子通过空间电荷层的隧穿从导带向界面转移而产生的异常光电流与较大的暗电流同时发生。通过测量光电流或阻抗,研究了表面状态对测定平带电位的影响。在-1.5 V预极化后,通过从阴极电位到阳极电位的扫描,可以得到可靠的结果。用这种方法测得的平带电位为-0.5±0.05 V。
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Photoelectrochemical properties of polycrystalline TiO2 electrodes: Anomalous photoeffects

We combined optical and impedance measurements with conventional electrochemical techniques to investigate the photoprocesses that occur on polycrystalline TiO2 electrodes in the presence of reducible adsorbates in solution. The semiconductor-electrolyte junction is treated as a simple Schottky barrier. The photopotential, photocurrent and capacitance are described using this model. The observed anomalous large cathodic photoeffects on n-type TiO2 result from either anodic photoproduction or the diffusion of the dissolved oxygen adsorbed on the electrode surface. Anomalous photocurrents occur together with relatively large dark currents, which are caused in n-type semiconductors by electron transfer from the conduction band to the interface via tunnelling through the space charge layer. The influence of the surface states on the determination of the flat-band potential by measurements of either the photocurrent or the impedance was also examined. It was found that reliable results could be obtained by scanning from cathodic to anodic potentials after prepolarization at -1.5 V. The value determined in this way for the flat-band potential was -0.5±0.05 V.

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