高速空心阴极非晶硅沉积

Applications of Surface Science Pub Date : 1985-05-01 DOI:10.1016/0378-5963(85)90225-9

Chris M. Horwitz, David R. McKenzie

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引用次数: 6

摘要

利用射频激发空心阴极以高速率沉积非晶硅。在6分钟内形成了0.6 μm的薄膜，从而克服了经济制造非晶硅器件的重要障碍。此外，薄膜耐磨损，这可能是生长薄膜所受到的极高离子轰击的结果。红外光谱证实，在没有任何外部衬底加热的情况下，氢的键合主要以首选的一氢化物形式进行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-rate hollow-cathode amorphous silicon deposition

Amorphous silicon has been deposited at high rates using an RF-excited hollow cathode. Films of 0.6 μm have been formed in 6 min, thus overcoming an important barrier to economic fabrication of amorphous silicon devices. In addition, the films are resistant to abrasion, which may be a consequence of the extremely high ion bombardment which the growing films are subject to. Infrared spectra have confirmed that the bonding of hydrogen is predominantly in the preferred monohydride form, without any external substrate heating.

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