纳米传感器阵列中垂直排列碳纳米管的无催化剂和低温生长

H. Pham, C. D. de Boer, P. Sarro
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引用次数: 1

摘要

本文提出了一种在硅衬底上纳米孔阳极氧化铝(AAO)模板上垂直生长排列碳纳米管的新技术。在不使用过渡金属催化剂的情况下,使用甲烷在RF PECVD系统中生长,温度仅为400/spl℃。在草酸中采用两步阳极氧化法制备了AAO模板。考察了制备温度、电解液、外加电压和阳极氧化时间等条件对微孔密度、直径、长度和形状的影响。AAO膜的孔直径在30 ~ 70 nm之间。CNTs的平均直径和长度分别约为40 nm和1 /spl mu/m。这种低温、集成电路兼容的工艺非常有吸引力,因为它允许碳纳米管器件与片上电子器件集成。
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Non-catalyst and low temperature growth of vertically aligned carbon nanotubes for nanosensor arrays
In this paper we present a new technique to vertically grow aligned carbon nanotubes (CNTs) on nanosize pore anodic aluminum oxide (AAO) templates on a Si substrate. The CNTs are grown using methane in an RF PECVD system at only 400/spl deg/C without using a transition metal catalyst. The AAO templates are prepared by a two-step anodizing process in oxalic acid at room temperature. The influence of preparation conditions, such as temperature, electrolyte, applied voltage and anodization time on the density, diameter, length and the shape of the pores is investigated. The diameter of the pores of AAO film varies from 30 nm to 70 nm. The average diameter and length of CNTs are approximately 40 nm and 1 /spl mu/m respectively. This low temperature, IC-compatible process is very attractive as it allows integration of CNT devices with on-chip electronics.
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