K. Hayashino, K. Harauchi, Y. Iwasaki, K. Fukui, J. Ao, Y. Ohno
{"title":"GaN肖特基势垒二极管整流电路损耗机理分析","authors":"K. Hayashino, K. Harauchi, Y. Iwasaki, K. Fukui, J. Ao, Y. Ohno","doi":"10.1109/IMWS.2012.6215780","DOIUrl":null,"url":null,"abstract":"Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.","PeriodicalId":6308,"journal":{"name":"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications","volume":"46 1","pages":"179-182"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode\",\"authors\":\"K. Hayashino, K. Harauchi, Y. Iwasaki, K. Fukui, J. Ao, Y. Ohno\",\"doi\":\"10.1109/IMWS.2012.6215780\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.\",\"PeriodicalId\":6308,\"journal\":{\"name\":\"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications\",\"volume\":\"46 1\",\"pages\":\"179-182\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS.2012.6215780\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE MTT-S International Microwave Workshop Series on Innovative Wireless Power Transmission: Technologies, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS.2012.6215780","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of loss mechanism in rectenna circuit with GaN Schottky barrier diode
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
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