用于EHF卫星通信地面终端的GaAs mmic

军事通信技术 Pub Date : 1988-10-23 DOI:10.1109/MILCOM.1988.13473

D. Hampel, A. Upton

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引用次数: 9

摘要

作者讨论了GaAs、mmic及其在EHF接地终端中的潜在用途。这种对GaAs mmic(单片微波集成电路)的评估，虽然集中在模拟射频前端，但也包括一些相关的关键数字功能。讨论了性能要求和特定应用领域，如20 ghz低噪声放大器和44 ghz功率放大器，并介绍了当前低噪声高电子迁移率晶体管(hemt)和高效率伪晶hemt的最新性能，以及未来五年的预计性能改进。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs MMICs for EHF SATCOM ground terminals

The authors address the potential uses of GaAs, MMICs, and their benefits, for EHF ground terminals. This assessment of GaAs MMICs (monolithic microwave integrated circuits), while concentrating on the analog RF front end, also includes some associated critical digital functions. Performance requirements and specific application areas, such as 20-GHz low-noise amplifiers and 44-GHz power amplifiers, are discussed and current state-of-the-art performance in low-noise high-electron-mobility transistors (HEMTs) and high efficiency pseudomorphic HEMTs is presented, along with projected performance improvements over the next five years.<>

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军事通信技术

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