解释某些ccd暗电流温度依赖性的拟合参数

IF 0.1 0 THEATER Teatro e Storia Pub Date : 2005-12-19 DOI:10.1109/SMICND.2005.1558791
E. Bodegom, R. Widenhorn, D.A. lordache
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引用次数: 1

摘要

分析了一些电荷耦合器件中暗电流温度依赖性的实验结果。发现所使用的理论模型允许:(i)评价实验误差的最低限度(包括系统误差);(ii)研究Meyer-Neldel关系,指出扩散暗流与能隙Eg的高度相关性,而不像耗尽暗流的相应弱相关性;(iii)将获得的深层陷阱能量值准确地分配给某些特定杂质
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Interpreting fitting parameters of temperature dependence of dark currents in some CCDs
The experimental results concerning the temperature dependence of the dark currents in some charge-coupled devices (CCDs) were analyzed. It was found that the used theoretical model allows: (i) the evaluation of the lowest limit of experimental errors (involving the systematic ones), (ii) the study of Meyer-Neldel relations, pointing out the high correlation of diffusion dark currents with the energy-gap Eg, unlike the corresponding weak correlation of depletion dark currents (iii) rather accurate assignments of the obtained values of deep-level traps energies to some specific impurities
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Teatro e Storia
Teatro e Storia THEATER-
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