{"title":"磁性氧化物薄膜作为控制带电粒子束的工具","authors":"E. Vasko, I. Melnichuk","doi":"10.1109/OMEE.2012.6464733","DOIUrl":null,"url":null,"abstract":"Trajectories of the movement of electrons scattered by a thin magnetic film of Sm<inf>1.2</inf>Lu<inf>1.8</inf>Fe<inf>5</inf>O<inf>12</inf> with a stripe domain structure (SDS) have been computed. It has been shown that the domain structure considerably influences the nature of the electrons scattering and results in a number of orientational effects.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"77 1","pages":"262-263"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thin films of magnetic oxides as a tool for control of a charged particles beam\",\"authors\":\"E. Vasko, I. Melnichuk\",\"doi\":\"10.1109/OMEE.2012.6464733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Trajectories of the movement of electrons scattered by a thin magnetic film of Sm<inf>1.2</inf>Lu<inf>1.8</inf>Fe<inf>5</inf>O<inf>12</inf> with a stripe domain structure (SDS) have been computed. It has been shown that the domain structure considerably influences the nature of the electrons scattering and results in a number of orientational effects.\",\"PeriodicalId\":6332,\"journal\":{\"name\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"volume\":\"77 1\",\"pages\":\"262-263\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEE.2012.6464733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thin films of magnetic oxides as a tool for control of a charged particles beam
Trajectories of the movement of electrons scattered by a thin magnetic film of Sm1.2Lu1.8Fe5O12 with a stripe domain structure (SDS) have been computed. It has been shown that the domain structure considerably influences the nature of the electrons scattering and results in a number of orientational effects.