与铁磁引线并联的双量子点隧穿磁阻计算

Laith Nazar, T. Salman
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摘要

本文考虑了由双槽干涉仪组成的对称系统中电子输运的理论模型,该系统的每一个臂上都有一个单能级量子点。在这个模型中,这些点附着在具有平行和反平行磁性结构的铁磁引线上。模型采用格林函数技术。我们的重点是电导(G)和隧道磁电阻(TMR)的输运特性。特别注意了外加磁通量对电导和隧道磁阻特性的影响。在电导的研究中,发现在不同的磁场值下,成键(反键)态对量子点的影响最为明显。自旋极化值的变化会影响电导值的增减。我们注意到在成键态和反键态的TMR计算中存在差异,结果显示成键态有很强的不协调,反键态有很强的吸引力。
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Tunneling magnetoresistance calculation for double quantum dot connected in parallel shape to ferromagnetic Leads
In this paper, a theoretical model for electron transport through symmetric system consisting of two baths interferometer with one single-level quantum dot in each of its arms was considered. In this model, the dots are attached to ferromagnetic leads with parallel and antiparallel magnetic configurations. Green's function technique in this model was used. Our focus is on the Transport characteristics of conductance (G) and tunnel magnetoresistance (TMR). A special attention to the influence of an applied magnetics flux on the characteristics of conductance and tunneling magnetoresistance was paid. Concerning the study of the conductance, it was found that the effect of bonding (antibonding) states is most obvious in quantum dots at various values of the magnetic field. The change in spin-polarization value was seen to affect the increase and decrease in the conductance value. We noticed a difference in calculation of TMR in the bonding and the antibonding states, where the results show Strong dissonance in bonding state and strong attraction in antibonding state.
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