隧道MIS系统中薄氧化层隧穿传输概率的测定

Applications of Surface Science Pub Date : 1985-05-01 DOI:10.1016/0378-5963(85)90235-1

A.G. Nassibian, A.K. Duong

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引用次数: 2

摘要

利用金属-隧道氧化物-半导体晶闸管的开关特性，提出了一种确定薄氧化层隧穿传输概率的新方法。发现隧道传输概率对氧化层厚度非常敏感，并且依赖于氧化层上的电压降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Determination of tunneling transmission probability through thin oxide layer in a tunnel MIS system

A new method is developed to determine the tunneling transmission probability through a thin oxide layer by making use of the switching characteristic of a metal-tunnel oxide-semiconductor thyristor. It is found that the tunneling transmission probability is very sensitive to oxide thickness and is dependent on the voltage drop across the oxide layer.

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