碳原子掺杂石墨烯及其在N2活化中的性能

Surfaces Pub Date : 2022-04-01 DOI:10.3390/surfaces5020016
N. Kuganathan
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引用次数: 0

摘要

本文利用密度泛函理论研究了硫掺杂剂(O、S、Se和Te)在石墨烯表面的分散校正、吸附和取代。结果表明,单个氧原子比其他掺杂剂更倾向于在石墨烯表面吸附,其吸附能为- 0.84 eV。从石墨烯表面到氧的0.34个电子的更大电荷转移证明了这种掺杂剂的优先性。氧的取代掺杂在能量上比其他原子的掺杂更有利。氮原子的吸附增强了氮原子的活化,而掺杂了硫原子的活化并不显著。
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Chalcogen Atom-Doped Graphene and Its Performance in N2 Activation
In this work, we studied dispersion correction, adsorption and substitution of chalcogen dopants (O, S, Se and Te) on the surface of graphene using density functional theory. The results reveal that a single oxygen atom is more preferred for adsorption onto the graphene surface than the other dopants, with an adsorption energy of −0.84 eV. The preference of this dopant is evidenced by a greater charge transfer of 0.34 electrons from the graphene surface to the oxygen. The substitutional doping of oxygen is energetically more favourable than the doping of other atoms. While nitrogen activation is enhanced by the adsorption, the activation is not significant with the doping of chalcogen atoms.
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