Si(211)基摩擦纳米发电机运行过程中的氧化损伤

Surfaces Pub Date : 2023-08-21 DOI:10.3390/surfaces6030020
Carlos Hurtado, S. Ciampi
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引用次数: 0

摘要

摩擦电纳米发电机(TENGs)是一种基于滑动金属-半导体结的新型摩擦电纳米发电机,可以有效地将机械能转化为电能。这些微型自主电源可以输出大的直流(DC)密度,但往往受到耐用性的限制;因此,它们的实际范围仍然不确定。本文通过导电原子力显微镜(C-AFM)和光电流衰减(PCM)实验的结合,探讨了dc - teng在使用过程中表面磨损的根本原因。使用单层功能化的Si(211)表面作为模型系统,我们展示了在TENG操作期间表面损伤发展的程度。我们发现,在TENG操作过程中,表面缺陷(氧化物生长)的引入不是由相当大的电流密度(平均输出~2 × 106 A/m2)的通过引起的;相反,它主要是由滑动肖特基二极管输出可测量的零偏置电流所需的大压力(~GPa)引起的。我们还发现,在运行过程中,输出的下降伴随着摩擦/压力事件的延迟,这部分解释了为什么DC-TENG性能的这种恶化经常被低估或未被报道。
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Oxidative Damage during the Operation of Si(211)-Based Triboelectric Nanogenerators
Triboelectric nanogenerators (TENGs) based on sliding metal–semiconductor junctions are an emerging technology that can efficiently convert mechanical into electrical energy. These miniature autonomous power sources can output large direct current (DC) densities, but often suffer from limited durability; hence, their practical scope remains uncertain. Herein, through a combination of conductive atomic force microscopy (C-AFM) and photocurrent decay (PCM) experiments, we explored the underlying cause of surface wear during the operation of DC-TENGs. Using monolayer-functionalized Si(211) surfaces as the model system, we demonstrate the extent to which surface damage develops during TENG operation. We reveal that the introduction of surface defects (oxide growth) during TENG operation is not caused by the passage of the rather large current densities (average output of ~2 × 106 A/m2); it is instead mainly caused by the large pressure (~GPa) required for the sliding Schottky diode to output a measurable zero-bias current. We also discovered that the drop in output during operation occurs with a delay in the friction/pressure event, which partially explains why such deterioration of DC-TENG performance is often underestimated or not reported.
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