表面织构对双面硅异质结太阳能电池载流子损耗的影响

E. Tonita, C. Valdivia, K. Hinzer
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摘要

我们研究了高效率双面硅异质结太阳能电池在其最大输出功率下,表面纹理对电流损耗的影响,作为深度和波长的函数。我们将三维光线追踪与TMM薄膜边界条件耦合用于光学模拟,并求解泊松漂移-扩散方程来计算前后照明下的载流子复合。对于正入射的前(后)AM1.5G照明,规则的倒金字塔比平面和直立金字塔纹理效率分别高出17.1%(17.9%)和1.4%(1.0%)。据计算,倒金字塔结构的载流子损耗减少主要是由于与平面表面相比,反射率降低了63%(76%),这导致在c-Si衬底深处的载流子生成增强。当考虑到较高的入射角时,倒金字塔光捕获的好处将进一步增强,角度性能尤其与后侧面相关。
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Impact of Surface Texture on Bifacial Silicon Heterojunction Solar Cell Carrier Loss
We investigate the impact of surface texturing on current loss as a function of depth and wavelength in high efficiency bifacial silicon heterojunction solar cells operating at their maximum power output. We couple 3D ray tracing with TMM thin-film boundary conditions for optical simulations and solve Poisson’s drift-diffusion equations to calculate carrier recombination under both front and rear illumination. For front (rear) AM1.5G illumination at normal incidence, regular inverted pyramids out-perform planar surfaces and upright pyramid texture efficiencies by 17.1% rel. (17.9% rel.) and 1.4% rel. (1.0% rel.), respectively. Reduced carrier loss for inverted pyramid textures is calculated to be primarily due to a reflectivity decrease of 63% (76%) compared to planar surfaces which results in enhanced carrier-generation at depths further into the c-Si substrate. The benefit of inverted pyramidal light-trapping will be further enhanced when higher angles of incidence are considered, with angular performance particularly relevant for the rear-side.
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