Pelin Cakir , Rachel Eloirdi , Frank Huber , Rudy J.M. Konings , Thomas Gouder
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引用次数: 1
摘要
在有氧存在的氩气气氛下(反应溅射)在金箔上溅射共沉积UO2和U0.55Th0.45O2薄膜样品。用x射线光电子能谱(XPS)对薄膜进行了表征。以该薄膜为电极，在0.01 M NaCl pH中性非净化电解液中进行了循环伏安法(CV)研究。通过比较U0.55Th0.45O2电极和UO2电极，观察了钍在UO2晶格中的作用。结果表明，在晶格中加入钍后，铀的抗氧化能力增强。CV测量后，再用XPS对膜进行表征。表面富集了11%的钍。铀处于较高的氧化态;然而，铀在U0.55Th0.45O2中比在UO2中更容易被氧化。
Photoelectron Spectroscopy (XPS) and Cyclic Voltammetry (CV) Investigation of UxTh1-xO2 Thin Films
Thin film samples of UO2 and U0.55Th0.45O2 have been prepared by sputter co-deposition under argon atmosphere in presence of oxygen (reactive sputtering) onto gold foil. Films were characterized by X-Ray Photoelectron Spectroscopy (XPS). Cyclic Voltammetry (CV) studies have been made by using the thin films as electrodes in 0.01 M NaCl pH neutral non-purged electrolyte. The effect of thorium in the UO2 lattice is observed by comparing the U0.55Th0.45O2 electrode to the UO2 electrode. The results indicate that uranium develops enhanced resistance to the oxidation when thorium is added to the lattice. After the CV measurements, the films were again characterized by XPS. The surface is enriched in thorium by 11%. Uranium is in a higher oxidation state; however, uranium is less oxidized in U0.55Th0.45O2 than in UO2.
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