S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen
{"title":"N+P - Co -离子注入纳米晶金刚石薄膜的微等离子体光照增强","authors":"S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen","doi":"10.1002/pssa.202300157","DOIUrl":null,"url":null,"abstract":"N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.","PeriodicalId":87717,"journal":{"name":"Physica status solidi (A): Applied research","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films\",\"authors\":\"S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen\",\"doi\":\"10.1002/pssa.202300157\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.\",\"PeriodicalId\":87717,\"journal\":{\"name\":\"Physica status solidi (A): Applied research\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica status solidi (A): Applied research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202300157\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica status solidi (A): Applied research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.202300157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
N -和P - co - ion注入将纳米晶金刚石薄膜的电导率提高到6.9 s cm - 1，并将薄膜的微等离子体照明(MI)特性提高到340 V的低击穿电压，6.3 mA cm - 2 (@510 V)的大等离子体电流密度，等离子体寿命稳定性为10 h。N离子在薄膜中诱导纳米相，P离子降低了金刚石-硅界面的电阻，共同促进了有效电子传递的传导通道，从而提高了薄膜的MI性能。
Microplasma Illumination Enhancement in N+P‐Co‐Ion‐Implanted Nanocrystalline Diamond Films
N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
