PVD -磁控溅射法制备CuO薄膜

S. Boiciuc, Dunărea de Jos
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引用次数: 1

摘要

本文所进行和描述的实验研究旨在从铜氧化物中获得薄膜,并从结构和光电性能的角度对其进行表征。为了获得铜膜,使用了PVD喷涂沉积系统,该系统由容量为2升的真空室,一个具有铁氧体磁铁(40x22x9)的平面磁控管( - 15x8),带滑动叶片的真空泵,电压为100 - 600伏的可变直流电源组成。在沉积过程中用于等离子体维持的气氛是在3·10-2 - 8·10-3毫巴的压力范围内氩稀薄的。沉积物是在玻璃板上沉积的。这样得到的薄膜随后在200、300和450℃的温度下进行氧化。结果表明,随着氧化温度的升高,膜的透明度从200℃时的1.464 × 10-4增加到450℃时的0.5,膜的表面电阻也从200℃时的0.984 Ώ增加到450℃时的3882857、1428 Ώ。随着喷射功率的增大,透明度和表面强度降低。
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CuO Films Obtained by Oxidation of Cu Layers Deposited by the PVD Process - Magnetron Sputtering
The experimental research carried out and described in this paper aimed to obtain thin films from copper oxides and their characterization from the structural point of view and the optical and electrical properties. To obtain the copper films, a PVD spray deposition system was used, consisting of a vacuum chamber with a capacity of 2 liters, a planar magnetron with ferrite magnets (40x22x9) neodymium (15x8), a vacuum pump with sliding blades, a variable source of direct current of voltage 100 - 600 volts. The atmosphere used for plasma maintenance during deposition was argon rarefied in a pressure range between 3·10-2 - 8·10-3 mbar. The deposits were made on glass plates. The films thus obtained were subsequently subjected to oxidation at temperatures of 200, 300 and 450 °C. It was found that the transparency of the films increases with the oxidation temperature from 1.464 * 10-4 for 200 ºC to 0.5 for 450 ºC and the surface electrical resistance also increases from 0.984 Ώ for 200 ºC to 3882857,1428 Ώ for 450 ºC. With increasing spray power, transparency and surface strength decrease.
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审稿时长
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