石墨烯和掺硅石墨烯的电子结构、电导率和芳香性的理论见解

R. Ghiasi, Faegheh Aghazadeh Kozeh Kanani
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引用次数: 7

摘要

本研究采用M062X量子化学计算方法研究了石墨炔和掺硅石墨炔的偶极矩、电子结构、前沿轨道能和芳构性。计算了四种可能的掺硅石墨烯异构体的相对能。并报道了所研究分子的电离势(IP)和电子亲和值(EA)。前沿轨道(HOMO-LUMO)间隙值用于说明这些分子的电导率。利用核无关化学位移(NICS)值和电子定位函数(ELF)研究了所研究分子循环的芳构性。
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Theoretical insights of the electronic structures, conductivity, and aromaticiy of Graphyne and Si-doped Graphynes
In the present research, the dipole moment, electronic structure, frontier orbitals energy, and aromaticity in the graphyne and Si-doped graphynes were studied with M062X quantum chemical computation. The relative energies of four possible isomers of Si-doped graphyne were calculated. Also, the ionization potential (IP) and electron affinity (EA) values of the studied molecules were reported. Frontier orbital (HOMO-LUMO) gap values were used for illustration of conductivity of these molecules. Aromaticity of the cycles of studied molecules was investigated by nucleus independent chemical shift (NICS) values and electron localization function (ELF).
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