预测铁电随机存取存储器中中子引起的单事件扰动的蒙特卡罗模拟

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Ferroelectrics Letters Section Pub Date : 2021-11-01 DOI:10.1080/07315171.2021.1971011
Hong Zhang, Jing Huang, H. Guo, Z. Lei, B. Li
{"title":"预测铁电随机存取存储器中中子引起的单事件扰动的蒙特卡罗模拟","authors":"Hong Zhang, Jing Huang, H. Guo, Z. Lei, B. Li","doi":"10.1080/07315171.2021.1971011","DOIUrl":null,"url":null,"abstract":"Abstract The influence of the single event effects (SEE) induced by neutron up to 14 MeV on ferroelectric random access memory (FRAM) is simulated by the Monte Carlo method. Simulation results show that single-event upset (SEU) occurs in FRAM when the neutron energy is greater than 6 MeV, and the average energy deposition of neutrons in the sensitive volume increases with increasing neutron energy. Neutron SEU in FRAM occurs when the energy deposition of a single secondary particles generated by a nuclear reaction in the sensitive region exceeds the critical energy. The neutron SEU cross-section of FRAM increases exponentially with increasing energy in the range of 6–14 MeV, and the SEU cross-section is about 1.39 × 10−14 cm2 at 14 MeV. These findings are due to concomitant increases in the variety and numbers of secondary particles whose energy deposition in the sensitive region exceeds the critical energy.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2021-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory\",\"authors\":\"Hong Zhang, Jing Huang, H. Guo, Z. Lei, B. Li\",\"doi\":\"10.1080/07315171.2021.1971011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract The influence of the single event effects (SEE) induced by neutron up to 14 MeV on ferroelectric random access memory (FRAM) is simulated by the Monte Carlo method. Simulation results show that single-event upset (SEU) occurs in FRAM when the neutron energy is greater than 6 MeV, and the average energy deposition of neutrons in the sensitive volume increases with increasing neutron energy. Neutron SEU in FRAM occurs when the energy deposition of a single secondary particles generated by a nuclear reaction in the sensitive region exceeds the critical energy. The neutron SEU cross-section of FRAM increases exponentially with increasing energy in the range of 6–14 MeV, and the SEU cross-section is about 1.39 × 10−14 cm2 at 14 MeV. These findings are due to concomitant increases in the variety and numbers of secondary particles whose energy deposition in the sensitive region exceeds the critical energy.\",\"PeriodicalId\":50451,\"journal\":{\"name\":\"Ferroelectrics Letters Section\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2021-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ferroelectrics Letters Section\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1080/07315171.2021.1971011\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2021.1971011","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

摘要采用蒙特卡罗方法模拟了高达14 MeV的中子诱导的单事件效应对铁电随机存取存储器(FRAM)的影响。仿真结果表明,当中子能量大于6 MeV时,FRAM中会发生单事件扰动(SEU),并且随着中子能量的增加,敏感体中中子的平均能量沉积增加。当敏感区核反应产生的单个二次粒子的能量沉积超过临界能量时,FRAM中的中子SEU就会发生。在6 ~ 14 MeV范围内,FRAM的中子SEU截面随能量的增加呈指数增长,在14 MeV时的SEU截面约为1.39 × 10−14 cm2。这些发现是由于伴随增加的二次粒子的种类和数量,其能量沉积在敏感区超过临界能量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Monte Carlo simulation for predicting neutron-induced single-event upset in ferroelectric random access memory
Abstract The influence of the single event effects (SEE) induced by neutron up to 14 MeV on ferroelectric random access memory (FRAM) is simulated by the Monte Carlo method. Simulation results show that single-event upset (SEU) occurs in FRAM when the neutron energy is greater than 6 MeV, and the average energy deposition of neutrons in the sensitive volume increases with increasing neutron energy. Neutron SEU in FRAM occurs when the energy deposition of a single secondary particles generated by a nuclear reaction in the sensitive region exceeds the critical energy. The neutron SEU cross-section of FRAM increases exponentially with increasing energy in the range of 6–14 MeV, and the SEU cross-section is about 1.39 × 10−14 cm2 at 14 MeV. These findings are due to concomitant increases in the variety and numbers of secondary particles whose energy deposition in the sensitive region exceeds the critical energy.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Ferroelectrics Letters Section
Ferroelectrics Letters Section 物理-物理:凝聚态物理
CiteScore
1.10
自引率
0.00%
发文量
1
审稿时长
4.8 months
期刊介绍: Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
期刊最新文献
From NdNiO2 to a Mott Multiferroic BiNiO2 Effects of high contents of dielectric inclusions on ferroelectricity in dielectric-ferroelectric nanocomposites with dimethylammonium aluminum sulfate hexahydrate Optical analysis of RE3+ (re = Sm, Dy): MgLa2V2O9 phosphors Design and Characterization of Eu2+/Ln3+ Co-doped SrAl2Si2O8 Photostimulated Phosphors for Optical Information Storages First Principles Study of Electron Structure of LaxBa1-xMnO3 Crystals
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1