镀铁碲化铅的接触电阻率温度依赖性

Gian C. Jain , William B. Berry
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引用次数: 0

摘要

热电器件的高效设计产生了明确的接触电阻标准。然而,这些标准是基于室温数据的。本文报道了镀铁碲化铅接触电阻(高达800°K)的测量结果。准备了两个理想化的理论模型来解释这种温度依赖性。结果表明,温度指数约为2.5。对于典型的热电材料,这表明接触电阻的温度依赖性基本上与体迁移率的温度依赖性相同。
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Contact resistivity temperature dependence of iron-plated lead telluride

Efficient design of thermoelectric devices has resulted in definite contact resistance criteria. These criteria, however, are based on room temperature data. This paper reports measurements of the contact resistance (up to 800°K) of iron-plated lead telluride. Two idealized theoretical models are prepared to explain this temperature dependence. The results agree that the temperature exponent is approximately 2·5. For typical thermoelectric materials this indicates that the temperature dependence of the contact resistance is essentially the same as that of bulk mobility.

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