温度对喷雾热解法制备硫化镍薄膜性能的影响

IF 1.5 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Advances in Materials Science Pub Date : 2020-09-01 DOI:10.2478/adms-2020-0015
A. Gahtar, S. Benramache, C. Zaouche, A. Boukacham, A. Sayah
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引用次数: 8

摘要

摘要:本文采用喷雾热解技术制备了新型硫化镍薄膜材料,作为提高光催化性能或超导性的助催化剂。研究了沉积温度(523、573和623 K)对材料结构、光学和电学性能的影响。XRD衍射结果表明,在523、573和623 K下制备的硫化镍具有正交、六边形和六边形结构,分别为Ni3S2、Ni17S18和NiS2。在573K时测得沉积膜的最小晶粒尺寸(45,9 nm)。在523和573 K下制备的薄膜的平均透过率约为20%。制备的Ni1S2薄膜在T=623 K时具有最小的光学带隙和厄巴赫能。Ni1S2薄膜的折射率和消光系数计算结果也最好。硫化镍的FTIR光谱具有Ni-S、C-H、O-H、N-H和C-S等不同波段。在573K时,Ni17S18的最大电导率为4,29 × 105 (Ω.cm)−1。在573K温度下喷涂的硫化镍薄膜具有良好的结构性能、光学性能和电性能。
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Effect of Temperature on the Properties of Nickel Sulfide Films Performed by Spray Pyrolysis Technique
Abstract In this work, we have prepared new materials of the nickel sulfide thin films by using the spray pyrolysis technique for promising co-catalyst to improve the photocatalytic performance or superconductivity. The effect of deposition temperature (523, 573 and 623 K) on structural, optical and electrical properties was investigated. The XRD diffraction shows that the prepared nickel sulfide at 523, 573 and 623 K having an orthorhombic, hexagonal and hexagonal structure, which were Ni3S2, Ni17S18 and NiS2, respectively. The minimum value of crystallite size (45,9 nm) was measured of deposited film at 573K. The thin films prepared at 523 and 573 K have an average transmittance is about 20 %. The prepared Ni1S2 thin film at T=623 K has the lowest calculated optical band gap and Urbach energy. The Ni1S2 thin film also has the best calculated of the refractive index and the extinction coefficient. The FTIR spectrums of the nickel sulfide have various bands such as Ni-S, C-H, O-H, N–H and C-S. The maximum electrical conductivity is 4,29x105 (Ω.cm)−1 was obtained at 573K of the Ni17S18. The nickel sulfide thin films sprayed at 573K have good structural, optical and electrical properties.
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Advances in Materials Science
Advances in Materials Science MATERIALS SCIENCE, MULTIDISCIPLINARY-
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