{"title":"类dram机械非易失性存储器","authors":"W. Jang, J. Lee, Jun‐Bo Yoon","doi":"10.1109/SENSOR.2007.4300601","DOIUrl":null,"url":null,"abstract":"A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.","PeriodicalId":23295,"journal":{"name":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2007-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A Dram-Like Mechanical Non-Volatile Memory\",\"authors\":\"W. Jang, J. Lee, Jun‐Bo Yoon\",\"doi\":\"10.1109/SENSOR.2007.4300601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.\",\"PeriodicalId\":23295,\"journal\":{\"name\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2007.4300601\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2007.4300601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminate the leakage current when the device is off. The mechanical NVM shows excellent on-off characteristics (sub-threshold swing~4 mV/decade), high switching speed (~300 kHz) and non-volatility. This paper demonstrates the feasibility of the mechanical NVM as a new memory for ULSI applications.
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